Separating the Influences of Neutral Base Recombination and Avalanche Breakdown on Base Current Reduction in SiGe HBT’s
نویسنده
چکیده
A simple experimental procedure is proposed to determine the separate ranges of reverse collector-base bias where neutral base recombination and avalanche breakdown, respectively, dominate base current reduction in silicon germanium heterojunction bipolar transistors (SiGe HBT’s) which exhibit significant neutral base recombination.
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